半导体桥等离子体温度的原子发射光谱法测量

Measurement of semiconductor bridge plasma temperature using spectroscopic method

半导体桥生成的等离子体由于温度高、尺度小、持续时间短等特点,对其温度的瞬态测量是个难题.本文采用高速数字存贮示波器应用原子发射光谱双谱线法对半导体桥等离子体温度进行了实时瞬态测量,并对在22μF电容下不同充电电压对半导体桥等离子体温度的影响进行了系统的研究,得到了22μF电容下等离子体最高温度与充电电压的关系式Tmax=700.6+115.2U.

It still remains a problem to determine the plasma temperature of semiconductor bridge（SCB） accurately due to its special characteristics such as high temperature,small volume and short during time etc.In this paper,we wish to report the real-time measurement of the plasma temperature of SCB based on the double-line method of atomic emission spectroscopy successfully using high-speed digital oscilloscope.The maximum temperatures of SCB plasma under different current voltages are obtained.The experimental results show that there is a linear relationship between the maximum temperatures and the current voltages.Finally,a fitted regression equation Tmax=700.6＋115.2U is achieved when the 22 μF capacitance is used.