摘要
采用HSiCl3-NH3-N2体系在750～900℃在石英陶瓷基板上沉积了Si3N4涂层,研究了温度对涂层沉积速率的影响。结果表明,随着沉积温度的升高,Si3N4涂层的沉积速率和致密度首先相应增大,在850℃达到最大值,此后逐渐下降。沉积所得的Si3N4涂层中有含氢化学键的存在。在沉积Si3N4涂层的过程中,Si3N4颗粒呈团簇状生长,团簇之间存在孔隙。
CVD Si3N4 coatings were prepared from HSiCI3-NH3-N2 system at 750 -900% by CVD on the quartz. The effects of deposition temperature on the growth rates of Si3 N4 coatings were studied. The results show that the growth rates and compacting will increase to the top then decrease with the temperature increaseing. There is hydrogen element in the coatings of Si3 N4 deposited, and in the deposition course the Si3N4 grain will grow into group, and thereuis much interspace in the middle of the groups.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2008年第1期42-45,共4页
Bulletin of the Chinese Ceramic Society
基金
航空基金项目(05G37003)
关键词
化学气相沉积
涂层
氮化硅
chemical vapor deposition
coatings
silicon nitride
