不同厚度氮镓铟/氮化镓量子阱的光学特性研究

Investigation on Optical Properties of Different Width InGaN/GaN Quantum Well

针对半导体薄膜厚度对器件光学特性的影响,利用金属有机物气相外延法研究了蓝宝石衬底上生长的InGaN/GaN单量子阱结构,其在室温下的的光学特性.大量实验结果表明,随着样品InGaN势阱层宽度的增加,光致发光谱的发光峰值波长出现了明显的红移现象,而且发光强度下降,谱线半高全宽展宽.通过对不同样品的透射、反射光谱研究发现,量子阱层窄的样品在波长接近红外区时出现无吸收的现象,而在阱层较宽的样品中没有发现这一现象.

Optical properties of InGaN/GaN heterojunction single quantum well （SQW） structures grown by metal-organic vapor phase epitaxy（MOVPE） on sapphire substrates have been investigated by using photolumineseenee spectrum and ultraviolet visible speetrophotometer at room temperature, respectively. As a result, with increasing potential well layer width, the PL peak position was redshifted, the intensity was reduced, and the full width at half maximum （FWHM） of PL spectrum increase. The spectra of transmission and reflection show that transmission T is very high where there can be only few reflection R as-no absorption in the near infrared ranges in the sample of the thin QW layer.