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Si/SiO_2多层膜的I-V特性研究 被引量：1

Study of I-V properties in Si/SiO_2 multi-layer films
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摘要 用射频磁控溅射法制备了Si/SiO2多层膜,并对多层膜的I-V特性实验结果进行了拟合.分析表明,Si/SiO2多层膜的I-V特性由多种因素决定,单一的电流输运模型不能控制Si/SiO2多层膜的I-V特性,多层膜结构及氧化硅层的厚度是影响薄膜I-V特性的主要因素. Si/SiO2 multi-layer films are fabricated using the RF magnetron sputtering technique, and the I-V properties of the multi-layer films are analyzed. The results indicate that lots of factors af- feet the I-V properties, single current carrier model could not explain the I-V properties of Si/SiO2 multi-layer films. The nano-structure of the multi-layer films and the thickness of the SiO2 layer are the primary factors affecting the I-V properties.
作者 马自军 马书懿
机构地区 甘肃农业大学理学院 西北师范大学物理与电子工程学院
出处 《物理实验》 2008年第5期12-15,共4页 Physics Experimentation
基金 国家自然科学基金资助项目(No60276015) 教育部科学技术研究资助项目(No204139) 甘肃省高分子材料重点实验室开放基金资助项目(NoKF-05-03) 甘肃农业大学理学院青年教师科研基金资助项目(NoLxy-02)
关键词 Si/SiO2多层膜 I-V特性 射频磁控溅射 电流输运 Si/SiO2 multi-layer films I-V properties RF magnetron sputtering current carrier
分类号 O484.42 [理学—固体物理]
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参考文献9

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二级参考文献16

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共引文献5

同被引文献7

  • 1MaSY, ZhangBR, QinGG, etal. R-ray effects on the photoluminescence spectra from nanometer Si embedded Si oxide films [J]. Material Research Bulletin, 1997,32:1 472-1 478.
  • 2Qin G G, Li A P, Zhang B R. Visible electrolumi- nescence from Au extra thin Si-rich SiO2 p-Si struc-ture[J]. J. Appl. Phys., 1995,78(3):2 006- 2 009.
  • 3Mayandi J, Finstad T G, Heng C L, et al. Infrared electroluminescence from a Si MOS structure with Ge in the oxide [J]. Journal of Luminescence,2007,127(2):362-366.
  • 4Zheng T H, Li Z Q. The present status of Si/SiO2 superlattice research into optoelectronic applications [J]. Super Lattices and Mierostructures, 2005,37: 227-247.
  • 5Fujii M, Nagareda T, Hayashi S, et al. Low-frequency Raman scattering from small silver particles embedded in SiO2 thin films [J]. Phys. Rev. B, 1991,44:6 243-6 248.
  • 6Fujii M, Yoshida M, Kanzawa Y. 1.54 μm photo- luminescence of Er^3+ doped into Si oxide films containing Si nanocrystals., evidence for energy transfer from Si nanocrystals to Er^3+ [J]. Appl. Phys. Lett. , 1997,71:1 198-1 200.
  • 7任驰,杨红,韩德栋,康晋锋,刘晓彦,韩汝琦.Al_2O_3栅介质的制备工艺及其泄漏电流输运机制[J].Journal of Semiconductors,2003,24(10):1109-1114. 被引量：5

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物理实验
2008年 第5期

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