二氧化锗纳米线的制备与喇曼光谱

Preparation and Raman spectroscopy of GeO_2 nanowires

以Au作催化剂通过在空气中将金属锗加热到550～800℃,在单质锗表面原位大面积生长出了GeO2纳米线.采用扫描电镜和激光喇曼光谱对产物进行了表征分析.结果表明,GeO2纳米线为六方相结构,长度可达30μm.通过改变加热温度,纳米线的直径可在110～170 nm范围内调节.提出了可能的生长机理以说明GeO2纳米线的形成.并且在GeO2纳米线的喇曼光谱中观察到了声子限制效应.

GeO2 nanowires could be in-situ grown on the surface of germanium substrates on a large scale by heating germanium wafers coated with an Au film at 550-800 ℃ in an air atmosphere. The synthesized products were characterized by scanning electron microscopy and Raman spectroscopy. The results showed that these GeO2 nanowires with a hexagonal structure had a controllable diameter in the range of 110- 160 nm with 30 micrometers in lengths by varying temperature. A possible mechanism was proposed to account for the growth of GeO2 nanowires, and the effects of phonon confinement on the Raman spectrum of GeO2 nanowires was also observed.