平面偏振光激励的多孔硅的光致发光(英文)

Photoluminescence from Porous Silicon by Plane Polarized Light Excitation

研究了以掠入射的平面偏振光激励的多孔硅的光致发光。实验结果显示，光的入射角对多孔硅的发光行为影响不大，然而，以ｚ方向偏振光激励的发光强度明显高于以ｘ方向偏振光激励的发光强度。激励光电场相对于样品表面的不同取向引起光致发光的差异，这反映多孔硅的光学性质是各向异性的，也排除了纯粹的硅量子点的集合作为多孔硅结构的可能性。

Luminescence from porous silicon is studied with plane polarized light excitation under grazing incidence. The experiments show that the incident angle of light almost has no influence on the luminescence behavior of porous silicon. However, the luminescence with z polarization excitation is found to be higher in intensity than that with x polarization excitation. The different orientations of the electric field of the exciting light with respect to the sample surface result in the difference in the excited luminescence, which reveals the anisotropy of the optical properties of porous silicon and rules out the assembly of pure quantum silicon dots as the structure of porous silicon.