类Be等电子序列的奇宇称高激发态结构(J=1)

HIGHLY-EXCITED STATE STRUCTURE OF BERYLLIUM-LIKE ISOELECTRONIC SEQUENCE WITH J =1 AND ODD PARITY

应用本征通道量子亏损理论（ＥＱＤＴ），计算了类Ｂｅ原子体系（Ｂｅ－ＭｇⅨ）的高激发态结构（奇宇称，Ｊ＝１），得到了表征高激发态性质的ＥＱＤＴ参量及２ｐｎｓ，２ｐｎｄ和２ｓｎｐ组态的全部Ｒｙｄｂｅｒｇ能级位置及通道混合系数。从各种相互作用之间竞争的角度，讨论了高激发态结构沿该等电子序列的变化规律。

We caculated the highly-excited states with J =1 and odd parity of the Beryllium isoelectronic sequence by using the eigenchannel quantum defect theory (EQDT). We obtained the EQDT parameters μ α and U iα of Be-like system from BeⅠ to Mg Ⅸ, as function of effective nuclear charge. Our results indicate that the differences between eigenquantum defects of different channels, which characterize the channel interactions, gradually dimish along this sequence. This isoelectronic behaviour is caused by the competition between electrostatic and spin-orbit interaction along the sequence. A lot of basic atomic data (e.g. all discrete energy levels and their channel mixing coefficients) were evaluted with EQDT parameters as input. As a numericalexample, the Lu-Fano plots of CⅢ were given.