Er,O离子共注入GaAs的二次离子质谱的研究

SECONDARY ION MASS SPECTROMETRY OF ERBIUM AND OXYGEN CO IMPLANTED IN GaAs

在Ⅲ－Ⅴ族半导体ＧａＡｓ外延层上共注入Ｅｒ和Ｏ离子（ＧａＡｓ：Ｅｒ，Ｏ）．经面对面优化退火后，光致发光（ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ－ＰＬ）谱中观测到对应Ｅｒ３＋第一激发态到基态４Ｉ１３／２－４Ｉ１５／２跃迁，其相对强度较单注入Ｅｒ的ＧａＡｓ（ＧａＡｓ：Ｅｒ）增强１０倍，且谱线变窄．从二次离子质谱（ＳｅｃｏｎｄａｒｙＩｏｎＭａｓＳｐｅｃｔｒｏｍｅｔｒｙ－ＳＩＭＳ）和卢瑟福背散射实验给出退火前后Ｅｒ在ＧａＡｓ：Ｅｒ样品中的剖面分布．ＳＩＭＳ测量分别给出Ｏ注入前后Ｅｒ和Ｏ在ＧａＡｓ：Ｅｒ，Ｏ中的深度剖面分布，分析表明Ｅｒ和Ｏ共注入后形成光学激活有效的发光中心．

Er and O ions were co implanted in Ⅲ Ⅴ compound semiconductor GaAs (GaAs:Er,O). After face to face annealing the sharp photoluminescence (PL) spectra were observed at 1.538μm, which correspond to the transition from the first excited state 4I 13/2 to the ground state 4I 15/2 of Er 3+ . The intensity of PL was enhanced about ten times in comparison with the only Er implanted GaAs sample: GaAs:Er. Depth profiles of Er implanted concentration were obtained and analyzed by Secondary Ion Mass Spectrometry(SIMS) and Rutherford Back Scattering(RBS) measurements as implanted and annealed. Depth profiles of Er and O co implanted were analyzed and studied by SIMS. The results indicate that a kind of optically active efficient luminescence center is formed in GaAs:Er,O.