摘要
用波长以１８４９和２５３７为主的短波紫外光对经阳极氧化的光电导器件进行一定时间的照射，结果表明，器件探测率和响应率显著提高．
The PC device was exposed to the short wave ultraviolet radiation of wave engths 1849 and 2537. The results show that the detectivity and tesponsivity of the device are improved dramatically.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第6期443-447,共5页
Journal of Infrared and Millimeter Waves
关键词
光电导探测器
碲镉汞
短波紫外光
红外探测器
photoconductive detector, Hg 1 x Cd x Te, surface passivation, anodic oxidation, short wave ultraviolet radiation.
