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应变硅电子迁移率解析模型(英文) 被引量：1

An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs
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摘要 提出了一个应变硅沟道电子迁移率解析模型.模型以应变张量为对象研究应变硅沟道电子迁移率,因此与工艺相独立;适用于施加双轴应力及〈100〉/〈110〉方向单轴应力,沟道方向为〈100〉/〈110〉的器件;易于嵌入常用仿真工具中. An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper. The model deals directly with the strain tensor,and thus is independent of the manufacturing process. It is suitable for （100〉/ 〈110） channel nMOSFETs under biaxial or （100〉/〈 110 ） uniaxial stress and can be implemented in conventional device simulation tools .
作者 李小健 谭耀华 田立林
机构地区 清华大学微电子学研究所清华信息科学与技术国家实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期863-868,共6页 半导体学报（英文版）
基金 国家重点基础研究发展规划资助项目(批准号:2006CB302705)~~
关键词 应变硅 电子迁移率 解析模型 n型场效应管 单轴应力/应变 Strained-Si electron mobility analytical model nMOSFET uniaxial stress/strain
分类号 TN301 [电子电信—物理电子学]
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参考文献19

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同被引文献30

  • 1唐元洪,裴立宅.硅纳米管的制备及应用前景[J].新材料产业,2005(3):16-19. 被引量：4
  • 2梁仁荣,张侃,杨宗仁,徐阳,王敬,许军.采用SiGe虚拟衬底高迁移率应变硅材料的制备和表征(英文)[J].Journal of Semiconductors,2007,28(10):1518-1522. 被引量：2
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Journal of Semiconductors
2008年 第5期

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