Effect of High-Gate-Voltage Stress on the Reverse Gated-Diode Current in LDD nMOSFET’s 被引量：2

高栅压电子注入损伤对产生电流的影响(英文)

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摘要 The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET＇s is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias, lowering the maximal generation rate. The density of the effective trapped electrons affecting the effective drain bias is calculated with our model. 用反向GD法研究了高栅压应力下的LDD nMOSFET中的损伤情况.发现这种应力下产生电流峰值随着应力时间的增大变小,峰值变小和氧化层中负陷阱电荷增大的趋势一致.峰值变小是由于应力中氧化层陷阱电子起主导作用,从而减小了漏电压的有效作用,使得产生率最大值变小.应用这种新模型定量得出了影响漏电压的等效电荷密度.

作者陈海峰郝跃马晓华

机构地区西安电子科技大学微电子学院

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期875-878,共4页 半导体学报（英文版）

基金国家自然科学基金资助项目(批准号:60376024)~~

关键词 generation current high gate voltage stress trapped electron 产生电流高栅压应力陷落电子

分类号 TN386 [电子电信—物理电子学]

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Journal of Semiconductors

2008年第5期

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