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应用于THz辐射的ZnTe单晶生长及测试 被引量:5

Growth and Characteristics of ZnTe Single Crystal for THz Technology
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摘要 利用Te溶剂方法生长出ZnTe单晶.经X射线衍射测试,发现晶锭中存在沿(110)晶向生长的大晶粒,可以切出10mm×10mm的单晶片.傅里叶红外变换光谱仪测得ZnTe晶体在2.5~20μm波段的红外透过率约为61%.通过测可见一红外波段的透射光谱,得出禁带宽度为2.24eV.利用飞秒激光作用在一块ZnTe单晶同时产生-探测THz脉冲,观察到0.18ps的THz辐射场分布,相应的频谱分布为5THz. ZnTe single crystals were grown perfectly by employing the Te-solution method. X-ray diffraction was introduced to investigate the crystals,and 〈110〉 oriented crystals of 10mm × 10mm size were obtained. The transmittance is about 61% in range of 2.5~20mm,as measured with a Fourier Transform Infrared spectrometer. The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24eV. Moreover,a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti.. sapphire amplifier system. The THz radiation signal has a pulse width of about 0.18ps and frequency bandwidth of 5THz.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期940-943,共4页 半导体学报(英文版)
基金 国家高技术研究发展计划(批准号:2006AA12Z135) 上海应用材料研究与发展基金(批准号:06SA05)资助项目~~
关键词 Te溶剂方法 ZnTe单晶 XRD THZ Te-solution method ZnTe crystal X-ray diffraction THz
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