摘要
利用Te溶剂方法生长出ZnTe单晶．经X射线衍射测试，发现晶锭中存在沿（110）晶向生长的大晶粒，可以切出10mm×10mm的单晶片．傅里叶红外变换光谱仪测得ZnTe晶体在2．5～20μm波段的红外透过率约为61％．通过测可见一红外波段的透射光谱，得出禁带宽度为2．24eV．利用飞秒激光作用在一块ZnTe单晶同时产生-探测THz脉冲，观察到0．18ps的THz辐射场分布，相应的频谱分布为5THz．
ZnTe single crystals were grown perfectly by employing the Te-solution method. X-ray diffraction was introduced to investigate the crystals,and 〈110〉 oriented crystals of 10mm × 10mm size were obtained. The transmittance is about 61% in range of 2.5～20mm,as measured with a Fourier Transform Infrared spectrometer. The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24eV. Moreover,a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti.. sapphire amplifier system. The THz radiation signal has a pulse width of about 0.18ps and frequency bandwidth of 5THz.
基金
国家高技术研究发展计划(批准号:2006AA12Z135)
上海应用材料研究与发展基金(批准号:06SA05)资助项目~~
