期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

一种测量RTD串联电阻的新方法 被引量：3

A New Method for Measuring Series Resistance of RTDs
下载PDF
导出
摘要 根据RTD峰值电压Vp与串联电阻RS、外加电阻Rex的关系,提出一种新的测量RTD串联电阻RS的方法.实验证明该方法具有准确、简便、快速等特点.文中给出Vp与RS,Rex关系的推导,RS测量原理、测量结果和与其他RS测量方法的比较. According to the relation among peak voltage Vp, series resistance Rs, and external resistance Rex, a novel method for measuring the series resistance R s of RTDs is proposed. The experimental result demonstrates that this method is accurate, simple, convenient, and quick. The derivation of the relation among Vp, R s, and R ex, the principle of R s measurement, the measured result of Rs ,and a comparison between this method and other measurement methods are illustrated in detail.
作者 郭维廉 宋瑞良 王伟 于欣 牛萍娟 毛陆虹 张世林 梁惠来
机构地区 天津工业大学信息与通信学院 天津大学电子信息工程学院
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期950-953,共4页 半导体学报（英文版）
基金 超高速专用集成电路重点实验室基金(批准号:51432010204Jw1401) 国家自然科学基金(批准号:NSFC60536030)资助项目~~
关键词 RTD参数 串联电阻的测量方法 RTD器件性能表征 parameters of RTD measurement method of series resistance the expression of RTD performance
分类号 TM934.1 [电气工程—电力电子与电力传动]
  • 相关文献

参考文献4

二级参考文献15

  • 1施敏 刘晓彦译.现代半导体器件物理[M].科学出版社,2002..
  • 2FINLEY J J, DUCOMMUN Y, KRENNER H. Double barrier resonant tunneling diodes experiment Ⅰ[ EB/OL] . http: // www.wsi.tu-muenchen.de/E24/education/Previous % 20 Lectures/Finley/SC_Nanotech/Lecture/Experiment% 20I% 20 -% 20RTDs.pdf.
  • 3RICCO B, AZBEL M Y. Physics of resonant tunneling: The one-dimensional double-barrier case [J] . Phys Rev B, 1984, 29 (4): 1970-1981.
  • 4LURYI S. Frequency limit of double-barrier resonant tunneling oscillators [J] . Appl Phys Lett, 1985, 47 (5): 490-492.
  • 5BROEKAERT T P E, LEE W, FONSTAD C G. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature [J] .Appl Phys Lett, 1988, 53 (16): 1545.
  • 6SEABAUGH A, BRAR B, BROEKAERT T, et al. Resonant-tunneling mixed-signal circuit technology [ J] . Solid-State Electronics, 1999, 43: 1355.
  • 7WAHO T, CHEN K J, YAMAMOTO M. Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output [J] . IEEE Journal of Solid-State Circuits, 1998, 33 (2): 268.
  • 8ZHONG M, ZHANG S L, GUO W L, et al. Comparison and analysis of two microwave equivalent-circuit models for resonant tunneling diode [J] . Chinese Journal of Semiconductors,2004, 25 (11): 1370.
  • 9BROWN E R, SODERSTROM J R, PARKER C D, et al.Oscillation up to 712 GHz in InAs/AISb resonant-tunneling diodes [J] . Appl Phys Lett, 1991, 58 (20): 2291.
  • 10SHIMIZU N, NAGATSUMA T, SHINAGAWA M, et d, Picosecond-switching time of In0.53Ga0.47As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique [ J] .IEEE Electron Device Lett, 1995, 16 (6): 262.

共引文献8

同被引文献27

  • 1Sheard F W, Toombs G A. Space charge build-up and bistability in resonant tunneling double-barrier structure[J]. Appl Phys Lett, 1988, 52(15) : 1228-1230.
  • 2Glavin B A, Kochelap V A. Patterns in bistable resonant tunneling structure[J]. Phys Rew B, 1997, 56 (20) : 13346-13359.
  • 3Lerch M L F, Martin A D,Simmonds P E, et al. A new technique for directly probing the intrinsic tristability and it's temperature dependence in a resonant tunneling diode[J]. Solid-state Electronics, 1994, 37 (4-6) : 961-964.
  • 4Jogai B, Koenig E T, A parametric study of extrinsic bistability in the current-voltage curves of resonanttunneling diodes[J].Appl Phys, 1991, 69(5): 3381- 3383.
  • 5Mathews R H, Sage J P, Sollner T C L G. A new RTD-FET logic family[J]. Proceeding of the IEEE, 1999, 87(4):596-605.
  • 6Masahiro T, Hiroyuki S, Junji Y, et al. Room tern- perature observation of differential negative resistance in an AIAs/GaAs/A1As resonant tunneling diode[J], Japanese Journal of Applied Physies, 1985, 24 (6): L466-L468.
  • 7Deen M J. Simple method to determine series resist- ance and it's temperature dependence in AlAs/GaAs/ AlAs double barrier resonant tunneling diodes. . Electrouies Letters, 1992, 28(13): 1195-1197.
  • 8Goldman V J,Tsui D C. Transport in double-barrier tunneling structures . J Appl Phys, 1987,61 (7) : 2693-2695.
  • 9Sadao Adachi著,季振国等译.Ⅳ族Ⅲ-Ⅳ族和Ⅱ-Ⅵ族半导体材料的特性[M].上海:科学出版社,2009:309.
  • 10Lide, David R. Handbook of Chemistry and Physics [M]. 75th edition. New York: CRC Press, 1996- 1997:11-14.

引证文献3

二级引证文献2

Journal of Semiconductors
2008年 第5期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部