多晶硅薄膜晶体管自加热效应温度分布的有限元模拟

Finite Element Analysis of Temperature Distribution of Polysilicon TFTs Under Self-Heating Stress

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摘要采用有限元方法模拟了n型MILC低温多晶硅薄膜晶体管在直流自加热应力下器件的温度分布.通过对器件沟道温度分布的稳态及瞬态模拟,研究了器件功率密度、衬底材料类型和器件宽长等关键因素的影响.确认了改善器件自加热退化的有效途径,同时有助于揭示多晶硅薄膜晶体管自加热退化的内在机制. The temperature distribution of typical-sized n-type polycrystalline silicon thin film transistors under self-heating （SH） stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density,substrate material, and channel width on temperature distribution is analyzed. This study is useful for understanding the mechanism of self-heating degradation, and to find approaches to effectively alleviate the SH effect in device operation.

作者杨震宇王明湘王槐生

机构地区苏州大学微电子学系

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期954-959,共6页 半导体学报（英文版）

基金国家自然科学基金资助项目(批准号:60406001)~~

关键词有限元分析温度分布薄膜晶体管自加热退化稳态及瞬态模拟 FEA temperature distribution thin film transistor self-heating degradation steady-state and transient simulation

分类号 TN321.5 [电子电信—物理电子学]

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参考文献13

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Journal of Semiconductors

2008年第5期

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多晶硅薄膜晶体管自加热效应温度分布的有限元模拟

参考文献13

二级参考文献6

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