衬底温度对钇稳定氧化锆薄膜择优生长的影响

The orientation growth of yttria-stabilized zirconia thin films under different substrate temperatures

使用脉冲激光沉积(PLD)技术在Si(100)衬底上沉积钇稳定的氧化锆(YSZ)薄膜,用XRD分析薄膜的结晶取向,SEM和AFM观测薄膜表面形貌,研究了在200-650℃的不同衬底温度下薄膜的择优生长.结果表明:衬底温度较低的YSZ薄膜为非品组织,衬底温度为300—500℃时YSZ晶粒以表面能低的(111)面首先择优生长,衬底温度超过550℃后品粒活化能提高而使表面能较高的(100)晶粒择优生长.YSZ薄膜是典型的岛状三维生长模式,较高的衬底温度有利于原子在衬底表面迁移和重排结晶长大.同其它沉积技术相比,用PLD技术能在比较低的衬底温度下在Sj(100)表面原位外延生长出较高质量的YSZ薄膜.

By using pulsed laser deposition （PLD） technology, a series of yttria-stabilized zirconia films have been deposited on Si （100） substrates, which were heated to the different temperatures between 200-650 ℃. The orientation growth of YSZ thin films was analyzed by XRD, the microstructure of YSZ films was observed by SEM or AFM, and the preferred growth of YSZ films for different substrate temperatures was investigated. The results showed that when the substrate temperature was low （ between 300-500 ℃）, YSZ grains had a （111） preferential growth due to its lower surface potential energy compare to the （100）, when the substrate temperature was higher than 550 ℃, YSZ films formed large grains with （100） preferential growth. Therefore the quality of （100） oriented YSZ films have been improved by growing the films at higher substrate temperature.