关于第三代电致发光器件加速层的一些探讨

STUDY OF ACCELERATING LAYER IN TFEL DEVICES

通过简化的三角势垒模型计算发现在第三代电致发光器件中，ＣｄＳ层确实对提供初电子有利．用计入非晶效应的ＭｏｎｔｅＣａｒｌｏ方法进行模拟计算，证明非晶ＳｉＯ２层比ＺｎＳ层有更好的加速作用，从而有利于提高器件蓝红比．

e build a simple model to demonstrate that in TFEL the CdS layer is helpful to improve the number of initial electrons, so that the intensity of luminescence will be strengthened. And by using a modified methods of Monte Carlo simulation, we pointed out that in new structure TFEL devices, the SiO2 layer is a better accelerating layer than the ZnS layer. 