量子阱微腔环型半导体激光器

QUANTUM WELL MICRORING SEMICONDUCTOR LASERS

报道了用纳米制作技术，实现了ＩｎＧａＡｓ／ＩｎＧａＡｓＰ环型微腔激光器．激光器的直径为３μｍ～２０μｍ，环的宽度为０．４μｍ～３μｍ，环的厚度为１９０ｎｍ．其激射峰值波长为１４０３ｎｍ．

InGaAs/InGaAsP microring lasers with diameter in the range 3 μm to 20 μm were achieved using nanofabrication techniques. The ring widthes are from 0.4 μm to 3 μm, and the ring thickness is 190 nm. The lasing peak wavelength were measured at 1403 nm.