摘要
在用于发光器件制造的多层MOCVD外延技术中,用高速氢气流冲洗管路、混合有机源获得晶格匹配好,而且界面过度层薄的突变异质结界面.
nterface structure of the epitaxial layers were improved by high speed hydrogen push flow to accelerate the mixing of the precursor materials and by adjusting the partial injected pressure to the tube connected to the reaction chamber. A typical pressure layout is given.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1997年第4期366-368,共3页
Chinese Journal of Luminescence
基金
广东省自然科学基金