摘要
We propose a diode end-pumped passively mode-locked Nd：Gd0.42Y0.58VO4 （Nd：GdYVO4） laser at 1064 nm using a GaAs absorber grown at low temperature as the output coupler. Stable continuous-wave （CW） mode locking with a 5.1-ps pulse duration at a repetition rate of 113 MHz is obtained. The maximum average output power is 2.29 W at the incident pump power of 12 W with the slope efficiency of about 24.8%.
We propose a diode end-pumped passively mode-locked Nd：Gd0.42Y0.58VO4 （Nd：GdYVO4） laser at 1064 nm using a GaAs absorber grown at low temperature as the output coupler. Stable continuous-wave （CW） mode locking with a 5.1-ps pulse duration at a repetition rate of 113 MHz is obtained. The maximum average output power is 2.29 W at the incident pump power of 12 W with the slope efficiency of about 24.8%.
基金
the National Natural Sci-ence Foundation of China (No.60478009)
Ph.D Degrees Foundation of Ministry of Education of China (No.20050445001).
