半导体量子点中LO声子对类氢杂质的影响

The LO Phonons Effect on the Hydrogenlike Impurity State in Semiconductor Quantum Dot

采用变分法从Ｆｒｏ¨ｈｌｉｃｈ哈密顿量出发，研究了ＬＯ声子对球形量子点中类氢杂质基态能的影响，并将结果应用到ＧａＡｓ／Ｇａ１－ｘＡｌｘＡｓ材料中．研究表明ＬＯ声子对ＧａＡｓ／Ｇａ１－ｘＡｌｘＡｓ（ｘ＝０．３）为材料的量子点中类氢杂质基态能影响很小．

The LO phonon effecting on the ground state energy of a hydrogenlike impurity in the spherical quantum dot by using variational method and Fro¨hlich hamiltonian.The results are applied to the material GaAs/Ga1xAlxAs and show that LO phonon has little effected on the ground state energy of a hydrogenlike impurity in the spherical GaAs/Ga1-xAlxAs quantum dot material.