退火对氧化锌薄膜结晶性能的影响

The effect of annealing on the crystallinity of ZnO films

采用射频磁控溅射法在(001)硅片上制备了ZnO薄膜,利用X射线衍射对薄膜的制备工艺进行了研究,结果表明,基板温度、溅射功率、氩氧比、总气压在一个较大的范围内变化时都可实现薄膜的c轴择优取向生长。随后对薄膜进行了空气退火并利用摇摆曲线表征薄膜的结晶质量,摇摆曲线的半高宽随退火温度的提高而减小,700℃退火后FWHM为2.5°。

ZnO films were deposited on Si （001） substrates by RF magnetron sputtering. The deposition conditions were studied by X-ray diffraction. The results showed that highly c-axis orientation films can be realized with varied substrate temperature,sputtering power,gas ratio and pressure in a relative wide range. The as-deposited films were annealed in air from 500-700℃ and the film crystallinities were characterized by X-ray rocking curve. It showed that the full-width at half maximum （FWHM） of the rocking curve decreased with the increasing of the annealing temperature. After annealed at 700℃ ,the FWHM was 2.5°.