半导体单量子点增益与吸收特性的研究

Investigation of a single semiconductor quantum dot's absorption and gain properties

采用密度矩阵的方法进行数值模拟计算紧束缚态的半导体单量子点的增益与吸收行为。其动力学数值结果显示,在某些不同时刻的增益谷和吸收峰的左右分布保持不变对称性,且有上下镜像反转的现象发生;在在长时间演化中发现该量子点系统的增益与吸收发生激烈的振荡而呈现出了量子光学中典型的崩塌与复苏的有趣物理现象。

The density matrix approach was employed to investigate analytically the absorption/gain behavior in a semiconductor quantum dot under the strong confinement regime. The numerical results show the distribution symmetry of the gain trough and absorption crest remains the same at some different time, and the phenomena of mirror reflection occurs. However, during the evolution duration the long time absorption/gain behavior of the quantum dot system oscillates furiously and a typical interesting quantum optical phenomena of collapse-revival emergences