SCLC法测量非晶硅有效隙态密度

Measurement of Effective Density of Gap States in Amorphous Silicon by SCLC Method

提出了用空间电荷限制电流（SCLC）法测量非晶硅材料的有效隙态密度的新方法，并且报告了用4061A型半导体综合测试仪测量有效隙态密度的结果。测量结果发现与用低频电容法所得结果相符。

A new principle of measuring effective density of gap states in amorphous silicon by space charge limited current (SCLC) method is givers in this paper.The result of effective density of gap states measured with the type of 4061A semiconductor synthetical measurement equipment is also reported. And the result is in agreement with one from low frequency capacitance method.