S波段低功耗单片集成低噪声放大器

S-band Low Power Consumption LNA MMIC

报道了S波段低功耗单片前置放大器的研制结果。该单片电路采用1μm×600μmGaAsE－MESFET、源反馈电感以及具有平面结构的集总参数LC匹配元件。用离子注入技术保证电路具有较好的一致世。在2．3GHz频率点测试结果如下：Ga＝80dB，NF＝2．06dB／2．0V，2．2mA；Ga＝10．5dB，NF＝2．25dB／3．0V，4．8mA。测试结果与设计目标基本一致，这一结果说明在低功耗应用选取GaAsE－MESFET作有原器件是可行的。

The design, fabrication and per formance of a low DC power, low noise amplifier MMIC for S-band front-end receiver application are described. The MMIC emp1oys an 1 μm ×600 μm GaAs enhancement mode MESFET and a source feedback inductance, and is matched by lumped LC elements with uniplanar configuration. The ion implantation technology is used for a good uniformity of the circuit performance. The measured results are in agreement with the theory. They are: Ga =8.0 dB, NF=2. 06 dB @ 2. 0 V,2. 2 mA; Ga=10. 5 dB, NF=2. 25 dB @ 3. 0 V,4. 8 mA at 2. 3 GHz. These results demonstrate that the GaAs E-MESFET is an excellent choice f0r low power consumption device.