摘要
在不同条件下(系统pH值,磨粉浓度,氧化剂浓度),通过对GaAs化学机械抛光速率变化规律的研究和对晶片表面氧化层的俄联(AES)分析,探讨了H2O2胶体磨料化学机械抛光的作用过程(表面氧化十机械磨除+化学去除)和系统pH值对其过程的影响。
Under different polishing conditions (pH value of polishing solution,concentration of colloidal Si and H2O2) the chemomechanical polishing rate of GaAs wafer is measured and the surface analyses are accomplished by Auger Electron Spectroscopy(AES). It is assumed that the chemomechanical polishing is the process including chemical reaction, mechanical removing and chemical removing. It shows how the pH value of polishing solution influences the GaAs polishing process.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第4期399-402,共4页
Research & Progress of SSE
关键词
抛光
机理分析
砷化镓
GaAs
Polishing
Mecbanism Analysis