一种开管铝镓扩散工艺的研究

Research on an Open Tube Gallium-Aluminium Diffusion Technology

就现行P型杂质扩散工艺的不足，进行了开旮铝镓掺杂技术的研究。经过大量实验和工艺论证，该研究取得成功，具有先进性和实用性，可明显地提高器件电参数一致性、综合性能和成品率，为电力半导体器件研究和生产开辟了一条可行的受主掺杂工艺。

Taking account of the disadvantage of current P-type impurity diffusio n technology, an open tube gallium-aluminium diffusion technology is investigated. The experiments and processing trials show that this technology is advanced and practical. It can obviously improve the consistency of electric parameters, the overall performance and the yield of devices, and open a practicable technological way for acceptor doping in the research and production of power semiconductor devices.