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Approximate Toffoli Gate Originated from a Single Resonant Interaction of Cavity Dissipation and Atomic Spontaneous Emission

Approximate Toffoli Gate Originated from a Single Resonant Interaction of Cavity Dissipation and Atomic Spontaneous Emission
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摘要 We propose a potentially practical scheme to implement an approximate three-qubit Toffoli gate by a single resonant interaction in dissipative cavity QED in which the cavity mode decay and atomic spontaneous emission are considered. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the approximate phase gate can be implemented by only a single dissipative resonant interaction of atoms with the cavity mode. Discussions are made for the advantages and the experimental feasibility of our scheme.
出处 《Communications in Theoretical Physics》 SCIE CAS CSCD 2008年第4期871-876,共6页 理论物理通讯(英文版)
基金 The project supported by National Natural Science Foundation of China under Grant No.10774042 National Fundamental Basic Research Program of China under Grant No.2005CB724502 Natural Science Foundation of Hunan Province under Grant No.05JJ30005 the Scientific Research Fund of Educational Department of Hunan Province under Grant No.05C756 the Scientific Research Fund of Hunan Institute of Humanity and Science and Technology under Grant No.2005A008
关键词 Toffoli gate cavity QED dissipative resonant interaction Toffoli门 空泡 QED 相互作用
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参考文献22

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