在低基片温度下制备的 ITO 透明导电膜的性能

Properties of ITO Transparent Conducting Film Deposited at Low Temperature

发展了使用直流辉光放电等离子体辅助反应蒸发法在低温玻璃基片上制备ＩＴＯ膜的工艺，研究了主要的工艺参数，如Ｓｎ／Ｉｎ配比，氧分压，基片温度等对于膜的透光率和电阻的效应。

A range of indium tin oxide (ITO) film were deposited on glass substrates at low temperature using DC glow discharge plasma enchanced reactive evaporating. The effects of the primary depositing parameters, such as Sn/In ratio, oxygen pressure, substrate temperature, on the film transmission and resistance were investigated.