摘要
从2001年Intel在IEDM发表第一篇相变存储器的论文以来,相变存储器的发展十分迅猛。相变存储器由于具有非易失性、循环寿命长、元件尺寸小、功耗低、可多级存储、高速读取、抗辐射、耐高低温、抗振动、抗电子干扰和制造工艺简单等优点,被认为最有可能取代目前的FLASH和DRAM而成为未来半导体存储器主流产品。文中系统地介绍了嵌入式相变存储器的存储机理及其主要工作特点,从相变材料,器件结构,存储阵列等方面分析国内外研究现状,并讨论了器件失效与可靠性问题。
The recent development of phase change memory （PCM） technology is fast since the Intel Company published the first paper about PCM. Because of non-volatility, high-cycling capability, scaling-down ability, low cell energy consumption, multi-level storage, high read rate, superior radiation vibration electron disturbance tolerance, superior high/low temperature tolerance and simple cell structure, PCM has the highest potential to replace all kinds of current memory devices such as flash memories, dynamic random access memories, and static random access memories in the future. A review of PCM is presented, which includes their principle of operation, major characteristics, current research status and reliability issues.
出处
《信息技术》
2008年第5期169-172,174,共5页
Information Technology
关键词
相变存储器
相变材料
器件结构
存储阵列
phase change memory
phase change material
device structure
memory array
