P型掺锌硫化铜铝透明导电薄膜的制备和性能研究

Growth and Properties of P-Type Zn-Doped CuAlS_2 Films

采用渠道火花烧蚀技术,在普通玻璃基板上制备掺锌硫化铜铝CuAl0.90Zn0.10S2透明导电薄膜。运用X射线衍射法(XRD)和原子力显微镜(AFM)分析薄膜的晶体结构和表面形貌。研究不同的制备条件对薄膜光电性能的影响。结果显示,薄膜表面平整致密,均为p型导电。氩气压强和基板温度对薄膜的电阻率和载流子浓度具有显著影响,例如,随着氩气压强增加,电阻率会先降低再上升,而载流子浓度则先增加再降低。在优化的制备条件下,薄膜的电阻率最小值为0.2Ω.cm,载流子浓度为6.67×1018cm-3,载流子迁移率最大为1.06 cm2V-1S-1。在基板温度Ts=500℃时,获得了室温下最高电导率为50.9 S.cm-1的薄膜。薄膜可见光区域的平均透射率大于60%。

CuAl0.9Zn0.10S2 transparent conducting films were deposited by channel spark ablation on glass substrates. The microstructures and physical properties were characterized with X-ray diffraction（XRD）, and atomic force microscopy（AFM）. The influence of the film growth conditions on its electrical and optical properties was studied. The resuits show that the fairly smooth and compact film behaves as a p-type semiconductor, and that the argon partial pressure and substrate temperature significantly affect the resistivity and carrier concentration of the films. For example, as the argon partial pressure increases, the resistivity decreases, then turns around and rises up; whereas the carrier concentration increases, turns around and drops down. Under optimized film growth conditions, the films with the lowest resistivity of 0.2Ω·m, the carrier concentration of 6.67× 10^18cm^-3 and the highest mobility of 1.06 cm^2V^-1S^-1 have been obtained. At a substrate temperature of 500℃, the highest conductivity of 50.9 S·cm^-1 was obtained. In the visible range, an averaged transmission was found to be better than 60%.