摘要
针对Si上生长BSCCO薄膜所出现的问题，通过比较分析几种适合超导薄膜生长的氧化物薄膜衬底后，认为在两者之间选取合适的缓冲层YSZ（Y稳定的ZrO2）可有效减小失配和互反应。详细介绍了磁控溅射YSZ膜的工艺，给出了实验结果。
It is demonstrated that YSZ thin film ic suitable for lessening the mismatches and atom-ic diffusion during the deposition of BSCCO films on Si(100)substrates on the basis of com-paratively analyzing several kinds of oxide thin films which are ideal superconductor sub-strates. The technical parameters of growing YSZ thin films by rf magnetron sputtering are discussed in details, and the experimental results are presented.
出处
《低温与超导》
CAS
CSCD
北大核心
1997年第4期30-34,共5页
Cryogenics and Superconductivity
