单晶硅上电沉积Ni-W-P合金薄膜

ELECTRODEPOSITION OF NICKEL- TUNGSTEN-PHOSPHORUS ALLOY FILM ON MONOCRYSTALLINE SILICON

在单晶硅上电沉积制备出了具有不同组成和结构的Ｎｉ－Ｗ－Ｐ合金薄膜；研究了镀液组成、温度、ｐＨ值和电流密度等因素对镀层组成的影响；用Ｘ射线衍射法分析了薄膜的结构结果表明，提高温度有利于钨的沉积，降低ｐＨ值有利于高磷薄膜的形成；随着合金中钨、磷含量的增加，晶粒尺寸逐渐减小。

Electrodeposition technology for nickel tungsten phosphorus alloy film on manocrystalline silicon was reported in the present paper Alloy film with different composition and different structure were prepared The effect of temperature,pH value,cathodic current density and concentration of sodium tungstate in the bath on the composition of deposit was investigated in detail X ray diffraction was used to determine the film stru cture Experimental results show that high temperature is favorable to the enhancement of W deposition and a low pH value is favorable to high P content As the content of W and P is increased,the average size of grains in the film becomes smaller,and the film approaches an amorphous structure