硅衬底GaN蓝色发光材料转移前后应力变化研究

Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate

利用外延片压焊和湿法腐蚀技术将硅衬底上生长的InGaN多量子阱发光二极管(LED)薄膜材料转移到了新衬底上.研究结果表明,转移后的LED薄膜中GaN层受到的张应力变小,InGaN层受的压应力变大.去除转移后LED薄膜中过渡层后,GaN层受到的张应力变大,而铟镓氮层受到的压应力基本不变.将转移后的薄膜做成垂直结构的LED芯片后,其光电性能明显改善.

InGaN multiple-quantum-well（MQW） light-emittlng diode（LED） thin films were successfully transferred from the original Si （111 ） substrate to new Si substrate, and then the vertical structure LEDs were fabricated. After the original substrate removal, the residual tensile stress in GaN layer of the transfferred film is partially ,relaxed, while the compressive stress in InGaN well layer is increased. When the buffer layer of the transferred LED film was eliminated, the tensile stress in GaN layer was shown to increase. However, the compressive stress in InGaN well layer was kept unvaried. The performance of the vertical LEDs was significantly improved compared with the lateral LEDs.