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BGSPT_x系高温压电陶瓷的结构及性能 被引量:1

Structure and properties of BGSPT_x system high temperature piezoelectric ceramics
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摘要 把BiGaO3作为第三组元引入BiScO3-PbTiO3(BS—PT)体系,用氧化物合成法制备、了0.155BiGaO3-(0.845-x)BiScO3-xPbTiO3(BGSPTx,x为0.54-0.58)压电陶瓷。XRD分析表明,BGSPL具有钙钛矿结构,但同时存在微量的富铋相。三方-四方准同型相界(MPB)位于x为0.56附近。在MPB附近,BGSPTx陶瓷的d33,kp和Pr都达到最大值,分别为180pC/N,30%和18.5×10^-6C/cm^2。εr-t特性曲线测试表明,陶瓷在MPB附近居里温度抽高达494℃。 BiGaO3 was introduced into the BiScO3-PbTiO3 (BS-PT) system and formed a new type of ceramics 0.155BiGaO3-(0.845-x)BiScO3-xPbTiO3 (BGSPTx, x = 0.54-0.58). BGSPTx ceramics were fabricated by using conventional mixed metal oxide processing. X-ray diffraction shows that the BGSPTx ceramics have perovskite structure, however, a small amount of the plenty Bi phase is detected. A rhombohedral to tetragonal phase transition (MPB) is determined in the vicinity of x = 0.56. For composition near MPB, BGSPTx ceramics show enhanced piezoelectric coefficient d33, planar coupling coefficient kp and remnant polarization Pr of 180 pC/N, 30%, and 18.5×10^-6 C/cm^2, respectively. The ,εr-t dependence of BGSPTx ceramics are performed, and its tc is 494 ℃ around MPB.
出处 《电子元件与材料》 CAS CSCD 北大核心 2008年第5期28-31,共4页 Electronic Components And Materials
基金 国家自然科学基金资助项目(No.60471044) 国家重点项目资助项目(No.G200514)
关键词 无机非金属材料 居里温度 钙钛矿结构 压电陶瓷 non-metallic inorganic material Curie temperature perovskite structure piezoelectric ceramic
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参考文献14

  • 1Cook W R, Jaffe J R. Piezoelectric Ceramics [M]. New York: Academic Press, 1971.
  • 2Shrout T R, Eitel R E, Randall C A. Piezoelectric Materials in Devices [M]. Switzerland: EPFL Swiss Federal Institute of Technology, 2002.
  • 3Eitel R E, Randall C A, Shrout T R, et al. Preparation and characterization of high temperature perovskite ferroelectrics in the solid-solution (1-x)BiScO3-xPbTiO3 [J]. Jpn J Appl Phys, 2002, 41: 2099--2104.
  • 4Eitel R E, Randall C A, Shrout T R, et al. New high temperature morphotropic phase boundary piezoelectrics based on Bi(Me)O3-PbTiO3 ceramics [J]. Jpn J Appl Phys, 2001, 40: 5999--6002.
  • 5Eitel R E, Shrout T R, Randall C A. Tailoring properties and performance of (1-x)BiScO3-xPbTiO3 based piezoceramics by lanthanum substitution [J]. Jpn JAppl Phys, 2004, 43: 8146--8150.
  • 6Chen S, Dong X, Yang H, et al. Predicting the position of the morphotropic phase boundary in high temperature PbTiO3-Bi(B'B'')O3 based dielectric ceramics [J]. J Am Ceram Soc, 2007, 90: 477--482.
  • 7Zhang S J, Eitel R E, Randall C A, et al. Manganese modified BiScO3-PbTiO3 piezoelectric ceramic for high temperature shear mode sensor [J]. Appl Phys Lett, 2005, 86:262904.
  • 8Song T H, Eitel R E, Shrout T R, et al. Dielectric and piezoelectric properties in the BiScO3-PbTiO3-PbO.SnO2 ternary system [J]. Jpn J Appl Phys, 2004, 43: 5392--5397.
  • 9Song T H, Eitel R E, Shrout T R, et al. Piezoelectric properties in the perovskite BiScO3-PbTiO3-(Ba, Sr)TiO3 ternary system [J]. Jpn J Appl Phys. 2003, 42:5181 --5184.
  • 10Cheng J, Eitel R, Li N, et al. Structural and electrical properties of (1-x)Bi(Ga1/4Sc3/4)O3-xPbTiO3 piezoelectric ceramics [J]. J Appl Phys, 2003, 94:605--609.

同被引文献10

  • 1钟维烈.铁电物理学[M].北京:科学出版社,1996..
  • 2张福学.压电单晶与传感器.成都:四川科学技术出版社,1985.
  • 3TURNER R C,FUIERER P A,NEWNHAM R E,et al. Materials for high temperature acoustic and vibra- tion sensors .- A review[J]. Applied Acoustics, 1994,41 (4) :299-324.
  • 4JAFFE H. Piezoelectric applications of ferroelectries [-J-]. IEEE Transactions on Elecron Device, 1969, 16 (6) :557-561.
  • 5EITEL R E,RANDALL C A,SHROUT T R,et al. New high temperature morphotropic phase boundary piezoelectrics based on Bi (Me)O3-PbTiO3 ceramics [J]. Japanese Journal of Applied Physics Part 1-Regu- lar Papers Short Notes Review Papers, 2001,40 (10) :5999-6002.
  • 6JIANG Y,QIN B,ZHAO Y,et al. Phase transition,piezoelectric properties, and thermal stability of (1- x- y) BiSeO3-yBiGaO3-xPbTiO3 eeramies[J]. Journal of the American Ceramic Society, 2008, 91 (9): 2943- 2946.
  • 7ZHANG S, YU F. Piezoelectric materials for high temperature sensors[-J]. Journal of the American Ce- ramic Society,2011,94(10) :3153-3170.
  • 8钟丽娜,孙洪雷.基于压电陶瓷的高灵敏度光纤光栅电压传感器[J].重庆工学院学报(自然科学版),2008,22(1):106-109. 被引量:10
  • 9张进秋,高永强,贾进锋,张建.PVDF压电加速度传感器电荷灵敏度影响因素分析[J].传感器世界,2008,14(10):21-25. 被引量:2
  • 10王巍,王晓磊,代作海,唐政维,李银国,徐洋,白晨旭.掺Fe^(3+)TiO_2薄膜型氧气传感器研究[J].重庆邮电大学学报(自然科学版),2011,23(4):443-446. 被引量:3

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