反应磁控溅射研究进展

Recent development of reactive magnetron sputtering

本文综述了反应磁控溅射技术的发展状态。分析了迟滞效应以及消除该效应的方法。这些方法包括(a)增加真空泵抽速;(b)阻止反应气体和靶接触;(c)控制反应气体分压;(d)减小靶面积。另外,还分析了弧光的起因并讨论了避免弧光的方法。采用单极或双极脉冲技术可以有效的消除弧光现象。最后展望了反应磁控溅射的发展趋势。

Surveys the recent development of reactive magnetron sputtering process for thin film deposition and analyzes the hysteresis effect in the process to eliminate it. The way to eliminate it includes（a） increasing the pumping speed; （b） stopping the reactive gas in contact with target; （c） controlling the partial pressure of reactive gas; （d） decrasing the target area. In addition, the cause of arcing and how to avoid it are discussed, and it was found that the unipolar or bipolar pulsing techniques can get rid of the arcing phenomenon. A developmental trend of reactive magnetron sputtering process is given.