摘要
综述了国家同步辐射实验室在表面化学的同步辐射研究中的部分新进展。其中包括碱金属K和稀土金属Gd对半导体表面氧化和氮化的催化作用;GaAs(100)半导体表面采用CH3CSNH2硫钝化的新方法;稀土金属Gd在半导体表面的吸附及界面形成;一种新的氧化镁薄膜的制备方法。
This paper has reviewed some progresses of synchrotron radiation photoelectron spectroscopy studies on the surface chemistry,which include:oxidation and nitridation of semiconductor surfaces promoted by alkali metal K and rare earth metal Gd,a new sulfur passivation method for GaAs surface by CH 3CSNH 2 treatment,the adsorption of rare earth metal Gd on the semiconductor surfaces and the formation of the interface,a new method for the synthesis of MgO thin film.
基金
国家自然科学基金
关键词
同步辐射
光电子能谱
表面化学
NSRL
Synchrotron radiation Photoelectron spectroscopy Surface chemistry