NSRL在表面化学中的同步辐射研究进展

The Progress of SR Studies on the Surface Chemistry at NSRL

综述了国家同步辐射实验室在表面化学的同步辐射研究中的部分新进展。其中包括碱金属Ｋ和稀土金属Ｇｄ对半导体表面氧化和氮化的催化作用；ＧａＡｓ（１００）半导体表面采用ＣＨ３ＣＳＮＨ２硫钝化的新方法；稀土金属Ｇｄ在半导体表面的吸附及界面形成；一种新的氧化镁薄膜的制备方法。

This paper has reviewed some progresses of synchrotron radiation photoelectron spectroscopy studies on the surface chemistry,which include:oxidation and nitridation of semiconductor surfaces promoted by alkali metal K and rare earth metal Gd,a new sulfur passivation method for GaAs surface by CH 3CSNH 2 treatment,the adsorption of rare earth metal Gd on the semiconductor surfaces and the formation of the interface,a new method for the synthesis of MgO thin film.