以废弃电子级硅片回收高纯硅的工艺研究

STUDY ON THE TECHNOLOGY OF RECYCLING HIGH PURITY SILICON MATERIALS FROM ELECTRONIC GRADE SILICON SCRAPS

讨论了来源于半导体器件行业的废弃电子级硅片的回收处理工艺。首先对不同样品进行分类,然后对硅片表面金属杂质层进行喷砂或化学腐蚀处理;并对样品进行了扫描电镜(SEM)、电学性能和痕量杂质元素方面的测试和分析。结果表明使用该方法回收处理废弃硅片切实可行,并能有效地节约利用高纯硅材料,对当前供不应求的太阳能级硅材料起到一定的补充作用。

The technology of recycling high purity silicon from electronic grade silicon scraps was discussed. Different sorts of the samples were categorized into several groups, and the metal impurity layers on the surface of the samples were removed with sand blasting and acid-etching. In addition, the micmstructure, electrical properties and impurity content of the samples were analyzed by using SEM, ICP, etc.. The results showed that it was feasible to recycle high purity silicon from electronic grade silicon scraps through acid-etching as well as sand blasting, and it will be available to supply the serious lack of solar grade silicon materials to a certain extent.