CCD电离辐射加固工艺研究

Ionizing Radiation Hardening Procedure of CCD' s

本文以简单的MOS电容为手段,研究CCD工艺,以提高器件的抗电离辐射能力。研究发现,栅氧化温度、SiO_2栅介质厚度和CCD工艺中栅氧化以后的高温过程对辐照性能的影响最大;并提出减薄SiO_2栅介质厚度、在1000℃干氧栅氧化、表面栅和埋栅下SiO_2介质在相同条件下生长以及栅氧化后工艺流程中的高温步骤的温度不能超过栅氧化温度和尽量减少栅氧化后的高温步骤等改进的工艺措施。

We investigated the procedure of charge-coupled devices (CCD) by using MOS capacitors for enhancing their ionizing radiation tolerance. We have found that the gate oxidation temperature, thickness of SiO2 gate insulator and high temperature processes after gate oxidation are crucial for determining the radiation tolerance of the devices, and proposed to decrease the thickness of gate insulator,perform gate oxidation at 1000 ℃ by means of dry oxidation, grow surface gate insulator and burried processes after gate oxidation than that adopted in gate oxidation and minimize the number of high temperature procedure steps after gate oxidation. All stated above is a necessary preparation for producing radiation hardened charge-coupled devices.