快速退火在提高芯片背金质量中的应用

Application of RTA in Improving the Quality of Device Backside Alloy

论述了芯片背面蒸金在管式合金炉合金后存在的质量问题,通过分析影响焊接质量的原因,提出用快速退火炉合金代替传统的管式合金炉合金,并优化合金温度和时间,最终找出合适的工艺条件,彻底解决了背金质量问题。该工艺生产的芯片饱和压降、热阻降低10%左右,且一致性好,同时使用快速退火炉合金后金层的厚度可大幅度减薄,大大降低了芯片成本。

The quality issues of backside alloy after alloyed in traditional alloying oven was focused. By analyzing the factor effecting on alloy quality, it was found that RTA could be used instead of traditional alloying oven. The alloy temperature and alloy time were optimized and the appropriate process condition was found out, the problems of alloy quality were completely solved. The Vsat and heat resistivity of the die produced using this method drop 10% and have high uniformity, and the thickness of the Au can be much thinner, the cost is decreased greatly.