纳米结构铟砷/镓砷量子环电子的能级

The Electronic Energy Levels of the Nanostructure InAs/GaAs Quantum Ring

在有效质量包络函数理论的框架下,研究了铟砷/镓砷量子环的电子态。计算中考虑了环内和环外的电子不同有效质量所产生的影响。用对角化法计算了在不同形状的环中电子的能级。结果显示,环内径敏感地改变电子态。电子能级并不敏感地依赖于环的外径。如果同时减小环的内、外径,可以增加能级间距并使基态能级不变。如果改变其中(内径或外径)之一,基态能级和能级间距同时改变。这些结果对通过带内和带间跃迁设计和制备双色探测器具有潜在价值。

In the framework of effective mass envelope function theory,the electronic states of the InAs/GaAs quantum ring are studied.In calculations,the effects due to the different effective masses of electrons in rings and out rings are included.The diagonalization is applied to calculate the energy levels of the electron in the dif-ferent shapes of rings.The results indicate that the inner radius of rings sensitively changes the electronic states.The energy levels of the electron are not sensitively dependent on the outer radius.If decreasing the inner and outer radii simultaneously,one may increase the energy spacing between energy levels and keep the ground state energy level unchanged.If changing one of two radii（inner or outer radius）,the ground state energy level and the energy spacing will change simultaneously.These results are useful for designing and fabricating the double col-ors detector by intraband and interband transition.