位错对薄硅片激光弯曲过程的影响

Influence of Dislocation on the Laser Bending Process of Thin Silicon

基于开展的薄硅片长脉冲激光弯曲成形实验,针对弯曲样品表面产生的滑移线和堆垛层错缺陷,结合实验所用规格硅片弯曲角度不超过35°的现象,运用位错理论分析在弯曲过程中硅晶体产生位错、层错现象的原因以及位错对激光弯曲成形的影响。说明了滑移线主要是位错堆积产生滑移的表现形式,而堆垛层错是位错相互叠加产生的不全位错导致的结果;提出薄硅片弯曲成形受到位错浓度和位错移动速度变化的影响。

Based on slip line and stacking fault appeared on the silicon surface, the dislocation theory is used to analyze the reasons of causing dislocation and stacking fault during the bending process and study their influence on the laser bending, according to the experiment of thin silicon laser bending. The analyzed results indicate that the slip line is caused by the dislocation accumulation, and the stacking fault is the results of piled dislocation. Meanwhile influence of the dislocation density and dislocation moving velocity on the process of laser bending is analyzed. The changing process of dislocation density and the deceased dislocation moving velocity are considered to form maximal angle.