退火对SOI材料电阻率的影响

Effect of Annealing on Resistivity of SOI Material

在SIMOX SOI材料外延生长硅层时,存在电阻率较高的过渡层。对衬底研究表明,SOI层呈现高阻。采取不同温度对衬底进行退火,结果表明:合适的温度退火可以明显降低SOI层电阻率,对外延硅层后的SOI材料进行退火,也可以部分降低外延层电阻率,减少外延层中高阻层厚度。

The transitional layer of high resistivity exists in the epitaxial silicon layer on SIMOX SOI substrate. The SRP result of SIMOX SOI indicates the resistivity of SOI layer is as high as that of the buried silicon oxide layer. The annealing of proper temperature in N2 atmosphere may lower the resistivity of SOI layer obviously. For epitaxial silicon layer on SOI substrate, annealing may lead to the similar result. The annealing may lower the resistivity of epitaxial silicon layer partly, and make the transitional layer of high resistivity become thinner.