摘要
用射频溅射法制备了(Fe88Zr7B5)0.97Cu0.03软磁合金薄膜,研究了不同磁场退火方式对薄膜磁导率和巨磁阻抗(GMI)效应的影响。结果表明,纵向和横向磁场退火都能有效地提高薄膜样品的巨磁阻抗效应,在13MHz频率下纵向最大GMI比分别为18.6%和17%;纵向磁场退火后薄膜样品的横向磁各向异性消失,横向磁场退火则能有效增强横向磁各向异性,提高巨磁阻抗效应的磁场响应灵敏度;磁场诱导的磁导率变化是巨磁阻抗效应变化的主要原因。
The （Fe88Zr7B5）0.97Cu0.03 films were deposited by radio frequency sputtering on the substrate of single crystal Si. The GMI effects and permeability of samples annealed in a field with different modes have been studied. The obtained results showed that the GMI Patios could be improved observably by longitudinal and transverse field annealing, with the maximum longitudinal GMI ratios being 18,6% and 17% at the frequency of 13 MHz, respectively. It is also revealed that longitudinal field annealing could effectively relieve transverse magnetic anisotropy, transverse annealing could effectively induce transverse magnetic anisotropy and improve the field sensitivity of longitudinal GMI. The GMI effect attributes mainly to the field-induced change of permeability.
出处
《磁性材料及器件》
CAS
CSCD
2008年第2期17-20,共4页
Journal of Magnetic Materials and Devices
基金
浙江省教育厅资助项目(20050050)
