化学气相沉积的过程监测

Process monitoring and measurement of chemical vapor deposition

介绍了化学气相沉积(CVD)过程监测的内容。根据CVD过程的特点和薄膜生长的要求,在CVD中需要被实时监测的主要过程参数是温度、化学物种和流体流动。对现有监测方法的原理和优缺点进行分析对比。重点介绍了常用监测方法以及原位实验监测的研究进展。

Based on the characteristics of CVD process and the requirements for film growth, temperature, chemical species and fluid flow are considered as the most important process parameters to be monitored and measured. Various CVD process monitoring methods used at present are summarized. These methods are summarized in tables together with a brief description of their principles, and the advantages and disadvantages of each method. Emphases are given to currently prevalent methods. The progress on in-situ monitoring and measurement of the CVD process is introduced.