非晶硅中氟的浓度分布

Concentration depth profiling of fluorine in amorphous-silicon

本文用尖锐共振核反应法测定氟在非晶硅中的深度分布,为检验退卷积方法的适用范围,对能级宽度在1keV以下和1keV以上两种情况,对同一样品进行了测量。结果表明:在1keV以下退卷积方法仍可适用。

The concentration depth profile of fluorine has been measured with narrow reson-ances of nuclear reactions. In order to find the applicable range of the deconvolution method two kinds of level-widtn with T>1 keV or T<lkeV have been measured for the same sample. The results indicate that the method is still applicable to the level-width below 1 keV.