N^+和Bi^+离子注入InP反冲原子P和In深度分布偏离的研究

The recoil effects of displacement atoms in InP implanted by N^+_- and Bi^+

本文给出了用背散射和沟道技术所分析的N^+和Bi^+注入InP中In和P原子位移的面密度分布。发现移位原子In和P面密度分布峰的深度随注入剂量的增大而加深。在相同的剂量下磷原子分布峰与表面的距离比In原子峰的大。从移位原子面密度分布峰的移动和分布的展宽与注入剂量的关系出发,研究了离子注入过程中所存在的反冲效应。并讨论了移位原子的反冲机理。

The profiles of displacement atoms in InP implanted by Nt and Bi+ are given us-ing the RBS/channelling technique in this paper. It is found that the depth of peaks of displacement In or P atom profiles increases with increase of ion dose. With the same dose the depth of peak of displacement P atom profile is greater than that of displacement In atom profile. According to the relation of the movement of peaks and the bro. adening of profiles tc dose, the reccil effects of displacement atoms are studied, and the mechanism of recoil effects is discussed: