快重离子束引起的Cu-Si膜系的两种不同类型的增强附着效应

Two types of fast heavy ion beam enhanced adhesion for Cu film on Si

对沉积在N型半导体硅上的Cu薄膜用几MeV的Cl离子进行了不同剂量的辐照实验以观测其增强附着行为。结果表明,Cu-Si膜系存在两种不同类型的增强附着效应。用扫描电镜对低剂量轰击出现附着增强区域的硅基底表面进行观察,未发现任何微裂现象。这与人们在解释Au-SiO_2膜系出现类似增强附着时提出的微裂观点不相符合。

The fast heavy ion beam enhanced adhesion of thin Cu film on Si substrate was studied for a wide range of C1 ion beam doses and for beam energies of 2.0,3.0 and 4.0 MeV. It is found that there are two types of enhanced adhesion. The surfaces of Si substrates were observed by means of a scanning electron microscope (SEM) after low dose ion bombardment. The micrographs show that no microcracks exist on the surfaces. This result seems to disagree with the explanation of low dose enhanced adhesion caused by the crazes on the substrate surface.