铁注入Al_2O_3陶瓷及退火改变材料表面电阻率的研究

Altering surface resistivity of polycrystallme A1_2O_3 by Pe implantation and annealing

本文主要阐述铁注入Al_2O_3陶瓷退火前后的表面电性能。应用卢瑟福背散射分析(RBS)、俄歇电子能谱分析(AES)和X-光电子能谱分析(XPS)等测试手段,研究了注入层结构、注入射程和纵向浓度分布。最后,扼要地叙述了注入层的导电机制。

Surface electrical properties of Fe implanted A12O3 followed by thermal annealling are presented. The Rutherford backseat tering technique, Auger electron spectra and X-ray electron spectra have been used to study the structure of the implanted layer, the implanted ion range and the ion profile. Finally, the conduction mechanism in the implanted layer is discussed briefly.