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带间共振隧穿二极管(RITD) 被引量：1

Resonant Interband Tunneling Diodes
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摘要 带间共振隧穿二极管(RITD)是导带与价带间发生共振隧穿的两端器件,其特点是启始电压VT和峰值电压Vp较低,电流峰谷比PVCR较大。在导出RITD物理模型和其电流密度方程的基础上重点介绍了InAs/AlSb/GaSbⅡ类异质结RITD、n+InAlAs/InGaAs/InAlAs/In-GaAs/p+InAlAsp-n结双势阱Ⅰ类RITD以及δ掺杂RITD三种RITD的器件结构、材料结构、工作原理、器件特性和参数等,并对这三种RITD的特点进行了比较和讨论。 Resonant Interband tunneling diode （RITD） is a two terminals resonant tunneling device in which the resonant tunneling effect arises between conduct/on-band and valence band. The features of RITD are low threshold voltage VT, peak voltage Vp and high peak-valley current ratio PVCR. On the base of derivation on physical model and current density equation of RITD, InAs/AlSb/GaSb Class Ⅱheterojunction RITD, n^＋ -InAlAs/InGaAs/InAlAs/InGaAs/p^＋-InAlAs p-n junction double Well Class I RITD, and δ doping type RITD are introduced. For these three types RITDs, the structures of materials and devices, operating principles, characteristics and parameters of devices are described in detail. And the features among three classes of RITDs are discussed.
作者 郭维廉
机构地区 天津工业大学信息与通讯学院
出处 《微纳电子技术》 CAS 2008年第6期326-333,共8页 Micronanoelectronic Technology
关键词 RITD RITD物理模型 Ⅱ类RITD p-n结双势阱Ⅰ类RITD δ掺杂RITD RITD physical model of RITD Class Ⅱ RITD p-n junction double well Class RITD δ-doping RITD.
分类号 TN312.2 [电子电信—物理电子学]
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参考文献8

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同被引文献10

  • 1郭维廉.共振隧穿器件概述——共振隧穿器件讲座(1)[J].微纳电子技术,2005,42(9):398-404. 被引量：6
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  • 3AUER U, PROST W, AGETHEN M, et al. Low-voltage MOBILE logic module based on Si/SiGe interband tunneling diodes [J]. IEEE Electron Device Letters, 2001, 22 (5): 215-217.
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  • 10DUSCHL R, SCHMIDT O G, EBERL K. Epitaxially grown Si/SiGe interband tunneling diodes with high room-tempera- ture peak-to-valley ratio [J]. Appl phys Lett, 2000, 76 (7) : 879- 881.

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微纳电子技术
2008年 第6期

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