摘要
研究了一种新型的、应用于X波段的高隔离度RF MEMS电容式并联开关结构。相比于普通的并联结构,该开关通过共面波导(CPW)传输线与地平面之间的衬底刻槽结构将隔离度提高了7dB,关态时在13.5GHz谐振频率处的隔离度为-54.6dB,执行电压为26V。弹簧梁结构开关的执行电压下降为14V,在11GHz处其隔离度为-42.8dB。通过两个并联开关级联与开关间的高阻传输线构成的π型调谐开关电路,在11.5GHz处的隔离度为-81.6dB。
A novel high isolation RF MEMS shunt capacitive switch for X-band application was presented. Compared with that of conventional RF MEMS shunt switches, the designed grooves etched into the substrate improve the isolation performance by 7 dB. The down-state isolation reaches -54. 6 dB at the resonate frequency of 13.5 GHz and an actuation voltage of 26 V is obtained. Serpentine folded suspension was implemented in the switch to achieve an actuation voltage of 14 V and isolation of - 42.8 dB at 11 GHz. A double-bridge switch consisting of two shunt switches separated by a high-impedance transmission line yields an isolation of - 81.6 dB at 11.5 GHz.
出处
《微纳电子技术》
CAS
2008年第6期342-346,共5页
Micronanoelectronic Technology
基金
中科院“百人计划”创新基金资助项目