期刊文献+

高隔离度X波段RF MEMS电容式并联开关 被引量:1

High Isolation X-Band RF MEMS Capacitive Shunt Switches
下载PDF
导出
摘要 研究了一种新型的、应用于X波段的高隔离度RF MEMS电容式并联开关结构。相比于普通的并联结构,该开关通过共面波导(CPW)传输线与地平面之间的衬底刻槽结构将隔离度提高了7dB,关态时在13.5GHz谐振频率处的隔离度为-54.6dB,执行电压为26V。弹簧梁结构开关的执行电压下降为14V,在11GHz处其隔离度为-42.8dB。通过两个并联开关级联与开关间的高阻传输线构成的π型调谐开关电路,在11.5GHz处的隔离度为-81.6dB。 A novel high isolation RF MEMS shunt capacitive switch for X-band application was presented. Compared with that of conventional RF MEMS shunt switches, the designed grooves etched into the substrate improve the isolation performance by 7 dB. The down-state isolation reaches -54. 6 dB at the resonate frequency of 13.5 GHz and an actuation voltage of 26 V is obtained. Serpentine folded suspension was implemented in the switch to achieve an actuation voltage of 14 V and isolation of - 42.8 dB at 11 GHz. A double-bridge switch consisting of two shunt switches separated by a high-impedance transmission line yields an isolation of - 81.6 dB at 11.5 GHz.
出处 《微纳电子技术》 CAS 2008年第6期342-346,共5页 Micronanoelectronic Technology
基金 中科院“百人计划”创新基金资助项目
关键词 射频微机电系统 开关 隔离度 X波段 衬底刻槽 RF MEMS switch isolation X band groove
  • 引文网络
  • 相关文献

参考文献9

  • 1PETERSEN K E. Micromechanical membrance switches on silicon [J]. Res Dev, 1979, 23 (4) :376- 385.
  • 2MULDAVIN J B, REBEIZ G M. High-isolation CPW MEMS shunt switches-part 2: design [J]. Trans Microwave Theory Tech, 1999. 48 (6): 1053-1056.
  • 3PARK J Y. KIM G H, CHUNG K W, et al. Monolithlcally integrated micromachined RF MEMS capacitive switches [J]. .Sensors and Actuators: A, 2001, 89 (1/2): 88-94.
  • 4TANG M, YUA A B, LIUA A Q, et al. High isolation Xband MEMS capacitive switches [J]. Sensors and Actuators: A. 2005, 120 (1): 241 -248.
  • 5MULDAVIN J B, REBEIZ G M. High isolation MEMS shunt switches-part 1: modeling [J]. Trans Microwave Theory Tech. 1999, 48 (6): 1045- 1052.
  • 6SIMONS R N. Coplanar waveguide circuits, components, and systems [M]. John Wiley & Sons, 2001.
  • 7YI J C. KIM S H, CHOI S S. Finite-element method for the impedance analysis of travelling-wave modulators [J]. IEEE J Lightwave Tech. 1990, 8 (6): 817-822.
  • 8HAGA H. IZUTSU M, SUETA T. LiNbO Travellingwave light modulator/switch with an etched groove [J]. IEEE J Quantum Electron, 1986, 22 (6) : 902- 906.
  • 9REBEIZ G M. RF MEMS theory, design, and technology [M]. John Wiley & Sons, 2003.

同被引文献3

引证文献1

二级引证文献3

;
使用帮助 返回顶部